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  • MMSF3P02HDR2

MMSF3P02HDR2

MOSFET 20V 3A P-Channel


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-MMSF3P02HDR2
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 672
  • Description: MOSFET 20V 3A P-Channel (Kg)

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Details

Tags

Parameters
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 567 mJ
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Lifecycle Status OBSOLETE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -3A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 16V
Current - Continuous Drain (Id) @ 25°C 5.6A Ta
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 97 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 5.6A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.075Ohm
See Relate Datesheet