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MRFE6VP5600HR6

MRFE6VP5600HR6 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi


  • Manufacturer: NXP USA Inc.
  • Origchip NO: 568-MRFE6VP5600HR6
  • Package: NI-1230-4H
  • Datasheet: PDF
  • Stock: 493
  • Description: MRFE6VP5600HR6 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Package / Case NI-1230-4H
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated 130V
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 230MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MRFE6VP5600
JESD-30 Code R-CDFM-F4
Qualification Status Not Qualified
Operating Temperature (Max) 225°C
Number of Elements 2
Configuration COMMON SOURCE, 2 ELEMENTS
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 100mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual)
Gain 25dB
DS Breakdown Voltage-Min 130V
Power - Output 600W
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 1670W
Voltage - Test 50V
RoHS Status ROHS3 Compliant
See Relate Datesheet