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MTB50P03HDLT4

MOSFET P-CH 30V 50A D2PAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-MTB50P03HDLT4
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 622
  • Description: MOSFET P-CH 30V 50A D2PAK (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation 2.5W
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -50A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 25A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 5V
Rise Time 340ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 218 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage -30V
Avalanche Energy Rating (Eas) 1250 mJ
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
See Relate Datesheet