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  • NDF06N60ZG

NDF06N60ZG

NDF06N60ZG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NDF06N60ZG
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 181
  • Description: NDF06N60ZG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Vgs (Max) ±30V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 7.1A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 28A
Height 16.12mm
Length 10.63mm
Width 4.9mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.2Ohm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 35W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 31W
Case Connection ISOLATED
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1107pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.1A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Rise Time 17ns
Drive Voltage (Max Rds On,Min Rds On) 10V
See Relate Datesheet