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  • NDF10N60ZG

NDF10N60ZG

NDF10N60ZG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NDF10N60ZG
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 391
  • Description: NDF10N60ZG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 1645pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Rise Time 31ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 3.9V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 40A
Height 16.12mm
Length 10.63mm
Width 4.9mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 18 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 650mOhm
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 39W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 36W
Case Connection ISOLATED
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 750m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
See Relate Datesheet