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  • NDF11N50ZG

NDF11N50ZG

NDF11N50ZG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NDF11N50ZG
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 241
  • Description: NDF11N50ZG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Case Connection ISOLATED
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 520m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1645pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Rise Time 32ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 12A
Factory Lead Time 18 Weeks
Threshold Voltage 3.9V
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
JEDEC-95 Code TO-220AB
Surface Mount NO
Gate to Source Voltage (Vgs) 30V
Number of Pins 3
Drain Current-Max (Abs) (ID) 6.7A
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Drain-source On Resistance-Max 0.52Ohm
Packaging Tube
Drain to Source Breakdown Voltage 500V
Published 2000
Pulsed Drain Current-Max (IDM) 42A
JESD-609 Code e3
Pbfree Code yes
Avalanche Energy Rating (Eas) 420 mJ
Part Status Obsolete
Nominal Vgs 3.9 V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Height 16.12mm
ECCN Code EAR99
Length 10.63mm
Terminal Finish Tin (Sn)
Width 4.9mm
Subcategory FET General Purpose Power
Radiation Hardening No
Technology MOSFET (Metal Oxide)
Pin Count 3
REACH SVHC No SVHC
Number of Elements 1
RoHS Status RoHS Compliant
Power Dissipation-Max 39W Tc
Lead Free Lead Free
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 39W
See Relate Datesheet