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NE25139-T1-U73

FET RF 13V 900MHZ SOT-143


  • Manufacturer: CEL
  • Origchip NO: 130-NE25139-T1-U73
  • Package: TO-253-4, TO-253AA
  • Datasheet: -
  • Stock: 507
  • Description: FET RF 13V 900MHZ SOT-143 (Kg)

Purchase & Inquiry

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Purchase

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Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Package / Case TO-253-4, TO-253AA
Surface Mount YES
Transistor Element Material GALLIUM ARSENIDE
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated 13V
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Terminal Form GULL WING
Current Rating 40mA
Frequency 900MHz
Base Part Number NE251
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Operating Temperature (Max) 125°C
Number of Elements 1
Configuration SINGLE
Operating Mode DUAL GATE, DEPLETION MODE
Case Connection SOURCE
Current - Test 10mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type MESFET Dual Gate
Gain 20dB
Drain Current-Max (Abs) (ID) 0.035A
DS Breakdown Voltage-Min 13V
FET Technology METAL SEMICONDUCTOR
Noise Figure 1.1dB
Voltage - Test 5V
Feedback Cap-Max (Crss) 0.03 pF
RoHS Status Non-RoHS Compliant
See Relate Datesheet