All Products

NESG250134-T1-AZ

RF Bipolar Transistors NPN Med Power Amp


  • Manufacturer: CEL
  • Origchip NO: 130-NESG250134-T1-AZ
  • Package: TO-243AA
  • Datasheet: PDF
  • Stock: 917
  • Description: RF Bipolar Transistors NPN Med Power Amp (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Supplier Device Package 3-PowerMiniMold
Packaging Cut Tape (CT)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 1.5W
Frequency 900MHz
Base Part Number NESG2501
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 1.8W
Output Power 800mW
Power - Max 1.5W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 9.2V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA 3V
Collector Emitter Breakdown Voltage 9.2V
Gain 23dB
Voltage - Collector Emitter Breakdown (Max) 9.2V
Current - Collector (Ic) (Max) 500mA
Max Frequency 10GHz
Max Breakdown Voltage 9.2V
Frequency - Transition 10GHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2.8V
hFE Min 80
Continuous Collector Current 500mA
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet