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NGTB35N60FL2WG

ON SEMICONDUCTOR NGTB35N60FL2WGIGBT Single Transistor, 70 A, 1.7 V, 300 W, 600 V, TO-247, 3 Pins


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NGTB35N60FL2WG
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 483
  • Description: ON SEMICONDUCTOR NGTB35N60FL2WGIGBT Single Transistor, 70 A, 1.7 V, 300 W, 600 V, TO-247, 3 Pins (Kg)

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Details

Tags

Parameters
Switching Energy 840μJ (on), 280μJ (off)
Height 21.08mm
Length 16.26mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300W
Element Configuration Single
Input Type Standard
Power - Max 300W
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 70A
Reverse Recovery Time 68 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.2V
Test Condition 400V, 35A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 35A
IGBT Type Trench Field Stop
Gate Charge 125nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 72ns/132ns
See Relate Datesheet