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NSVB114YPDXV6T1G

TRANS BRT 50V 100MA SOT563


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NSVB114YPDXV6T1G
  • Package: SOT-563, SOT-666
  • Datasheet: PDF
  • Stock: 467
  • Description: TRANS BRT 50V 100MA SOT563 (Kg)

Purchase & Inquiry

Transport

Purchase

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Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2014
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO 4.7
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 500mW
Terminal Form FLAT
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-F6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 500mW
Transistor Application SWITCHING
Polarity/Channel Type NPN AND PNP
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet