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NTB5605PT4G

NTB5605PT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTB5605PT4G
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 501
  • Description: NTB5605PT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Current Rating -18.5A
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 88W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 88W
Case Connection DRAIN
Turn On Delay Time 12.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Factory Lead Time 7 Weeks
Rds On (Max) @ Id, Vgs 140m Ω @ 8.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 25V
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Current - Continuous Drain (Id) @ 25°C 18.5A Ta
Number of Pins 3
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Transistor Element Material SILICON
Rise Time 122ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V
Published 2005
Vgs (Max) ±20V
JESD-609 Code e3
Fall Time (Typ) 75 ns
Turn-Off Delay Time 29 ns
Pbfree Code yes
Continuous Drain Current (ID) 18.5A
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Threshold Voltage -1.5V
Number of Terminations 2
Gate to Source Voltage (Vgs) 20V
ECCN Code EAR99
Terminal Finish Tin (Sn)
Drain to Source Breakdown Voltage -60V
Subcategory Other Transistors
Pulsed Drain Current-Max (IDM) 55A
Voltage - Rated DC -60V
Height 4.83mm
Technology MOSFET (Metal Oxide)
Length 10.29mm
Width 9.65mm
Terminal Form GULL WING
Radiation Hardening No
See Relate Datesheet