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  • NTD23N03RT4

NTD23N03RT4

MOSFET N-CH 25V 3.8A DPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD23N03RT4
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 737
  • Description: MOSFET N-CH 25V 3.8A DPAK (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 20V
Current - Continuous Drain (Id) @ 25°C 3.8A Ta 17.1A Tc
Gate Charge (Qg) (Max) @ Vgs 3.76nC @ 4.5V
Rise Time 14.9ns
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±20V
Turn-Off Delay Time 9.9 ns
Continuous Drain Current (ID) 17.1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.8A
Drain-source On Resistance-Max 0.06Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 40A
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 23A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.14W Ta 22.3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 22.3W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
See Relate Datesheet