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NTD4808N-35G

MOSFET N-CH 30V 9.8A IPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD4808N-35G
  • Package: TO-251-3 Stub Leads, IPak
  • Datasheet: PDF
  • Stock: 758
  • Description: MOSFET N-CH 30V 9.8A IPAK (Kg)

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Details

Tags

Parameters
Continuous Drain Current (ID) 63A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9.8A
Drain to Source Breakdown Voltage 30V
RoHS Status RoHS Compliant
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.4W Ta 54.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1538pF @ 12V
Current - Continuous Drain (Id) @ 25°C 10A Ta 63A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Rise Time 102ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 5.6 ns
Turn-Off Delay Time 11 ns
See Relate Datesheet