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  • NTD5407NG

NTD5407NG

MOSFET N-CH 40V 38A DPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD5407NG
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 969
  • Description: MOSFET N-CH 40V 38A DPAK (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 75W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 75W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 32V
Current - Continuous Drain (Id) @ 25°C 7.6A Ta 38A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 17ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 51 ns
Turn-Off Delay Time 66 ns
Continuous Drain Current (ID) 38A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.026Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 75A
RoHS Status RoHS Compliant
See Relate Datesheet