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NTD5865NT4G

MOSFET N-CH 60V 43A DPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD5865NT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 362
  • Description: MOSFET N-CH 60V 43A DPAK (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 18MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 71W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 52W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1261pF @ 25V
Current - Continuous Drain (Id) @ 25°C 43A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 17ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.5 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 43A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 38A
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 36 mJ
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet