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NTHD4502NT1G

MOSFET 30V 3.9A Dual N-Channel


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTHD4502NT1G
  • Package: 8-SMD, Flat Lead
  • Datasheet: PDF
  • Stock: 900
  • Description: MOSFET 30V 3.9A Dual N-Channel (Kg)

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Details

Tags

Parameters
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 10 hours ago)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface Mount YES
Number of Pins 8
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 80MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Max Power Dissipation 640mW
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating 2.9A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTHD4502N
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.13W
Turn On Delay Time 7.8 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.2A
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Rise Time 5.4ns
Fall Time (Typ) 5.4 ns
Turn-Off Delay Time 14.9 ns
Continuous Drain Current (ID) 3.9A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.1mm
Length 3.1mm
Width 1.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet