All Products

NTLJF3118NTAG

N-CHANNEL POWER MOSFET


  • Manufacturer: Rochester Electronics, LLC
  • Origchip NO: 699-NTLJF3118NTAG
  • Package: 6-WDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 413
  • Description: N-CHANNEL POWER MOSFET (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 3.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 271pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.6A Ta
Gate Charge (Qg) (Max) @ Vgs 3.7nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Drain Current-Max (Abs) (ID) 2.6A
Drain-source On Resistance-Max 0.065Ohm
Pulsed Drain Current-Max (IDM) 18A
DS Breakdown Voltage-Min 20V
FET Feature Schottky Diode (Isolated)
RoHS Status ROHS3 Compliant
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 265
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
JESD-30 Code S-XDSO-C6
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 700mW Ta
See Relate Datesheet