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NTLJS2103PTAG

MOSFET P-CH 12V 3.5A 6-WDFN


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTLJS2103PTAG
  • Package: 6-WDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 640
  • Description: MOSFET P-CH 12V 3.5A 6-WDFN (Kg)

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Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 700mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1157pF @ 6V
Current - Continuous Drain (Id) @ 25°C 3.5A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 27ns
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 74 ns
Continuous Drain Current (ID) 7.7A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 5.9A
Drain-source On Resistance-Max 0.04Ohm
Drain to Source Breakdown Voltage 12V
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet