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  • NTLUS3A18PZTBG

NTLUS3A18PZTBG

Single P-Channel Power MOSFET with ESD Protection -20V -8.2A 18mO


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTLUS3A18PZTBG
  • Package: 6-UDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 811
  • Description: Single P-Channel Power MOSFET with ESD Protection -20V -8.2A 18mO (Kg)

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Details

Tags

Parameters
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 20 hours ago)
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series µCool™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Pin Count 6
Number of Elements 1
Power Dissipation-Max 700mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.7W
Case Connection DRAIN
Turn On Delay Time 8.6 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2240pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.1A Ta
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 88 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 5.1A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 8.2A
Drain-source On Resistance-Max 0.018Ohm
Drain to Source Breakdown Voltage -20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet