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  • NTMFS4841NHT1G

NTMFS4841NHT1G

MOSFET N-CH 30V 8.6A SO-8FL


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMFS4841NHT1G
  • Package: 8-PowerTDFN, 5 Leads
  • Datasheet: PDF
  • Stock: 981
  • Description: MOSFET N-CH 30V 8.6A SO-8FL (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-PDSO-F6
Number of Elements 1
Power Dissipation-Max 870mW Ta 41.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.7W
Case Connection DRAIN
Turn On Delay Time 12.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2113pF @ 12V
Current - Continuous Drain (Id) @ 25°C 8.6A Ta 59A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 11.5V
Rise Time 20.6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.9 ns
Turn-Off Delay Time 21.9 ns
Continuous Drain Current (ID) 13.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 59A
Drain to Source Breakdown Voltage 30V
Height 1.1mm
Length 5.1mm
Width 6.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet