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  • NTMFS4852NT3G

NTMFS4852NT3G

MOSFET,N CH,W DIODE,30V,16A,SO8 FL


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMFS4852NT3G
  • Package: 8-PowerTDFN, 5 Leads
  • Datasheet: PDF
  • Stock: 366
  • Description: MOSFET,N CH,W DIODE,30V,16A,SO8 FL (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 5
Number of Elements 1
Power Dissipation-Max 900mW Ta 86.2W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 21.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.1m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4970pF @ 12V
Current - Continuous Drain (Id) @ 25°C 16A Ta 155A Tc
Gate Charge (Qg) (Max) @ Vgs 71.3nC @ 10V
Rise Time 25.6ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 155A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0033Ohm
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 360 mJ
Nominal Vgs 1.8 V
Height 1.1mm
Length 5.1mm
Width 6.1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet