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NTMFS4898NFT1G

MOSFET NFET SO8FL 30V 120A 3MOHM


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMFS4898NFT1G
  • Package: 8-PowerTDFN, 5 Leads
  • Datasheet: PDF
  • Stock: 970
  • Description: MOSFET NFET SO8FL 30V 120A 3MOHM (Kg)

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Number of Pins 5
Packaging Cut Tape (CT)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 3MOhm
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 930mW
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 5
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 73.5W
Case Connection DRAIN
Turn On Delay Time 17.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3233pF @ 12V
Current - Continuous Drain (Id) @ 25°C 13.2A Ta 117A Tc
Gate Charge (Qg) (Max) @ Vgs 49.5nC @ 10V
Rise Time 23ns
Fall Time (Typ) 8.3 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 13.2A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 234A
Avalanche Energy Rating (Eas) 228 mJ
Height 1.1mm
Length 5.1mm
Width 6.1mm
See Relate Datesheet