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NTMS4917NR2G

MOSFET NFET SO8 30V 10.2A 11MOHM


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMS4917NR2G
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 469
  • Description: MOSFET NFET SO8 30V 10.2A 11MOHM (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Lifecycle Status OBSOLETE (Last Updated: 23 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 880mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.28W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1054pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.1A Ta
Gate Charge (Qg) (Max) @ Vgs 15.6nC @ 4.5V
Rise Time 6.3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 7.1A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet