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  • NTMS7N03R2

NTMS7N03R2

MOSFET N-CH 30V 4.8A 8-SOIC


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMS7N03R2
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 332
  • Description: MOSFET N-CH 30V 4.8A 8-SOIC (Kg)

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Details

Tags

Parameters
Lifecycle Status OBSOLETE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 7A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 800mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.8A Ta
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Rise Time 71ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 4.8A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.023Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 14A
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet