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NVATS5A113PLZT4G

MOSFET P-CHANNEL 60V 38A ATPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVATS5A113PLZT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 205
  • Description: MOSFET P-CHANNEL 60V 38A ATPAK (Kg)

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Details

Tags

Parameters
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Bismuth (Sn/Bi)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 60W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29.5m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 20V
Current - Continuous Drain (Id) @ 25°C 38A Ta
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 38A
Drain-source On Resistance-Max 0.0295Ohm
Pulsed Drain Current-Max (IDM) 114A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 95 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
See Relate Datesheet