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  • NVTFS5811NLTWG

NVTFS5811NLTWG

NVTFS5811NLTWG N-channel MOSFET Transistor; 40 A; 40 V; 8-Pin WDFN


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVTFS5811NLTWG
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 968
  • Description: NVTFS5811NLTWG N-channel MOSFET Transistor; 40 A; 40 V; 8-Pin WDFN (Kg)

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Details

Tags

Parameters
Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code S-PDSO-F5
Number of Elements 1
Power Dissipation-Max 3.2W Ta 21W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 21W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Ta
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 55ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 354A
Avalanche Energy Rating (Eas) 65 mJ
Height 750μm
Length 3.15mm
Width 3.15mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet