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PHB20NQ20T,118

MOSFET N-CH 200V 20A D2PAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PHB20NQ20T,118
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 217
  • Description: MOSFET N-CH 200V 20A D2PAK (Kg)

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Shipping Cost

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2470pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Rise Time 46ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Factory Lead Time 16 Weeks
Max Dual Supply Voltage 200V
Mounting Type Surface Mount
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 80A
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Avalanche Energy Rating (Eas) 252 mJ
Number of Pins 3
Radiation Hardening No
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
RoHS Status RoHS Compliant
Packaging Tape & Reel (TR)
Published 2010
Series TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
See Relate Datesheet