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QSE113

FAIRCHILD SEMICONDUCTOR QSE113 Phototransistor, 880 nm, 25 , 100 mW, 2 Pins, Side Looking


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-QSE113
  • Package: Radial, Side View
  • Datasheet: PDF
  • Stock: 672
  • Description: FAIRCHILD SEMICONDUCTOR QSE113 Phototransistor, 880 nm, 25 , 100 mW, 2 Pins, Side Looking (Kg)

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Details

Tags

Parameters
Orientation Side View
Number of Functions 1
Output Voltage 30V
Lead Length 12.7mm
Operating Supply Voltage 5V
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation 100mW
Viewing Angle 50°
Output Power 100mW
Optoelectronic Device Type PHOTO TRANSISTOR
Lens Style Domed
Breakdown Voltage 30V
Rise Time 8μs
Fall Time (Typ) 8 μs
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 5mA
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 18 hours ago)
Wavelength - Peak 880 nm
Mount Through Hole
Collector Emitter Breakdown Voltage 30V
Lens Color Black, Clear
Mounting Type Through Hole
Power Consumption 100mW
Max Input Current 100μA
Input Current 100μA
Package / Case Radial, Side View
Dark Current 100nA
Infrared Range YES
Response Time-Max 0.000008s
Number of Pins 2
Light Current-Nom 0.25mA
Height 5.08mm
Weight 135mg
Length 4.44mm
Width 2.54mm
Shape ROUND
Radiation Hardening No
REACH SVHC No SVHC
Operating Temperature -40°C~100°C TA
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Packaging Bulk
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKER
Subcategory Photo Transistors
Voltage - Rated DC 30V
Max Power Dissipation 100mW
See Relate Datesheet