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RJH60F4DPQ-A0#T0

IGBT 600V 60A 235.8W TO247A


  • Manufacturer: Renesas Electronics America
  • Origchip NO: 668-RJH60F4DPQ-A0#T0
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 221
  • Description: IGBT 600V 60A 235.8W TO247A (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 235.8W
Base Part Number RJH60F
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 235.8W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 90 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 195 ns
Test Condition 400V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.82V @ 15V, 30A
Turn Off Time-Nom (toff) 165 ns
IGBT Type Trench
Td (on/off) @ 25°C 45ns/85ns
Gate-Emitter Thr Voltage-Max 8V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet