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  • SI1062X-T1-GE3

SI1062X-T1-GE3

MOSFET N-CH 20V SC-89


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI1062X-T1-GE3
  • Package: SC-89, SOT-490
  • Datasheet: PDF
  • Stock: 296
  • Description: MOSFET N-CH 20V SC-89 (Kg)

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Details

Tags

Parameters
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 220mW
Turn On Delay Time 2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 420m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 43pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 8V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 530mA
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Number of Pins 3
Weight 29.993795mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2016
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 420mOhm
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 220mW Ta
See Relate Datesheet