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  • SI1307DL-T1-E3

SI1307DL-T1-E3

MOSFET 12V 0.91A


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI1307DL-T1-E3
  • Package: SC-70, SOT-323
  • Datasheet: PDF
  • Stock: 517
  • Description: MOSFET 12V 0.91A (Kg)

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Details

Tags

Parameters
ECCN Code EAR99
Resistance 290mOhm
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Voltage 12V
Power Dissipation-Max 290mW Ta
Element Configuration Single
Current 68A
Operating Mode ENHANCEMENT MODE
Power Dissipation 290mW
Turn On Delay Time 7.5 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 290m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 850mA Ta
Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V
Rise Time 32ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 850mA
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
Height 990.6μm
Length 2.1844mm
Width 1.3462mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
See Relate Datesheet