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SI2325DS-T1-E3

MOSFET P-CH 150V 0.53A SOT23-3


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2325DS-T1-E3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 404
  • Description: MOSFET P-CH 150V 0.53A SOT23-3 (Kg)

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Details

Tags

Parameters
Vgs (Max) ±20V
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) -690mA
Threshold Voltage -4.5V
Factory Lead Time 14 Weeks
Gate to Source Voltage (Vgs) 20V
Contact Plating Tin
Drain to Source Breakdown Voltage -150V
Mount Surface Mount
Max Junction Temperature (Tj) 150°C
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Height 1.12mm
Number of Pins 3
Length 3.04mm
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Width 1.4mm
Series TrenchFET®
Radiation Hardening No
JESD-609 Code e3
Pbfree Code yes
Part Status Active
REACH SVHC No SVHC
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
RoHS Status ROHS3 Compliant
ECCN Code EAR99
Lead Free Lead Free
Resistance 1.2Ohm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 750mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 750mW
Turn On Delay Time 7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
Current - Continuous Drain (Id) @ 25°C 530mA Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
See Relate Datesheet