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  • SI3424DV-T1-E3

SI3424DV-T1-E3

MOSFET N-CH 30V 5A 6-TSOP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI3424DV-T1-E3
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 508
  • Description: MOSFET N-CH 30V 5A 6-TSOP (Kg)

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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Packaging Cut Tape (CT)
Published 2008
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 28mOhm
Terminal Finish MATTE TIN
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Max Power Dissipation 1.14W
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.14W
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 28m Ω @ 6.7A, 10V
Vgs(th) (Max) @ Id 800mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 10ns
Fall Time (Typ) 10 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 30V
Nominal Vgs 800 mV
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet