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SI5445BDC-T1-E3

MOSFET P-CH 8V 5.2A 1206-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI5445BDC-T1-E3
  • Package: 8-SMD, Flat Lead
  • Datasheet: PDF
  • Stock: 903
  • Description: MOSFET P-CH 8V 5.2A 1206-8 (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 33mOhm
Terminal Finish MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 12 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 33m Ω @ 5.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.2A Ta
Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 5.2A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -8V
Height 1.0922mm
Length 3.0988mm
Width 1.7018mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet