English

All Products

View All >>
  • SI6463BDQ-T1-E3

SI6463BDQ-T1-E3

MOSFET P-CH 20V 6.2A 8-TSSOP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI6463BDQ-T1-E3
  • Package: 8-TSSOP (0.173, 4.40mm Width)
  • Datasheet: PDF
  • Stock: 883
  • Description: MOSFET P-CH 20V 6.2A 8-TSSOP (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.05W
Turn On Delay Time 35 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 15m Ω @ 7.4A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.2A Ta
Gate Charge (Qg) (Max) @ Vgs 60nC @ 5V
Rise Time 40ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 190 ns
Continuous Drain Current (ID) -7.4A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 6.2A
Drain to Source Breakdown Voltage -20V
Height 1.0414mm
Length 4.4958mm
Width 3.0988mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Packaging Cut Tape (CT)
Published 2008
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 15mOhm
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Max Power Dissipation 1.05W
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Element Configuration Single
See Relate Datesheet