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  • SI7108DN-T1-GE3

SI7108DN-T1-GE3

MOSFET N-CH 20V 14A 1212-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7108DN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 861
  • Description: MOSFET N-CH 20V 14A 1212-8 (Kg)

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Details

Tags

Parameters
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.9m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 14A Ta
Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V
Rise Time 10ns
Factory Lead Time 14 Weeks
Mount Surface Mount
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Vgs (Max) ±16V
Transistor Element Material SILICON
Fall Time (Typ) 10 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Turn-Off Delay Time 60 ns
Published 2009
Continuous Drain Current (ID) 22A
Series TrenchFET®
Threshold Voltage 2V
JESD-609 Code e3
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.0049Ohm
Pbfree Code yes
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 24 mJ
Height 1.04mm
Part Status Active
Length 3.05mm
Width 3.05mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
See Relate Datesheet