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  • SI7431DP-T1-E3

SI7431DP-T1-E3

MOSFET P-CH 200V 2.2A PPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7431DP-T1-E3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 696
  • Description: MOSFET P-CH 200V 2.2A PPAK SO-8 (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 174mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.4W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 174m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.2A Ta
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Rise Time 49ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 49 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) -3.8A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2.2A
Drain to Source Breakdown Voltage -200V
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 45 mJ
Max Junction Temperature (Tj) 150°C
Nominal Vgs -4 V
Height 1.12mm
Length 4.9mm
Width 5.89mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet