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  • SI7625DN-T1-GE3

SI7625DN-T1-GE3

P-Channel 30 V 7 mO 5126 nC Surface Mount Power Mosfet - PowerPAK-1212-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7625DN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 405
  • Description: P-Channel 30 V 7 mO 5126 nC Surface Mount Power Mosfet - PowerPAK-1212-8 (Kg)

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Details

Tags

Parameters
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 35A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 20 mJ
Radiation Hardening No
Factory Lead Time 14 Weeks
REACH SVHC No SVHC
Mount Surface Mount
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 7MOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.7W Ta 52W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.7W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4427pF @ 15V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 126nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 17.3A
Threshold Voltage -1V
See Relate Datesheet