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  • SI7848BDP-T1-E3

SI7848BDP-T1-E3

Trans MOSFET N-CH 40V 16A 8-Pin PowerPAK SO T/R


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7848BDP-T1-E3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 469
  • Description: Trans MOSFET N-CH 40V 16A 8-Pin PowerPAK SO T/R (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Nominal Vgs 1 V
Factory Lead Time 14 Weeks
Height 1.04mm
Length 4.9mm
Contact Plating Tin
Width 5.89mm
Radiation Hardening No
Mount Surface Mount
RoHS Status ROHS3 Compliant
Mounting Type Surface Mount
Lead Free Lead Free
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Termination SMD/SMT
ECCN Code EAR99
Resistance 9mOhm
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 4.2W Ta 36W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 4.2W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 20V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 47A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 50A
Dual Supply Voltage 40V
See Relate Datesheet