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  • SI7852DP-T1-E3

SI7852DP-T1-E3

SI7852DP-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7852DP-T1-E3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 635
  • Description: SI7852DP-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi (Kg)

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Details

Tags

Parameters
Nominal Vgs 2 V
Height 1.12mm
Length 4.9mm
Width 5.89mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 16.5mOhm
Additional Feature FAST SWITCHING
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 7.6A Ta
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 12.5A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7.6A
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 50A
Max Junction Temperature (Tj) 150°C
See Relate Datesheet