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  • SIA444DJT-T1-GE3

SIA444DJT-T1-GE3

MOSFET N-Channel 30 V (D-S)


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIA444DJT-T1-GE3
  • Package: PowerPAK® SC-70-6
  • Datasheet: PDF
  • Stock: 827
  • Description: MOSFET N-Channel 30 V (D-S) (Kg)

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Details

Tags

Parameters
Terminal Finish MATTE TIN
DS Breakdown Voltage-Min 30V
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Height 750μm
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Length 2.05mm
Time@Peak Reflow Temperature-Max (s) 40
Width 2.05mm
Pin Count 6
JESD-30 Code S-PDSO-N3
Radiation Hardening No
Number of Elements 1
REACH SVHC Unknown
Number of Channels 1
RoHS Status ROHS3 Compliant
Power Dissipation-Max 3.5W Ta 19W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 7.4A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Factory Lead Time 15 Weeks
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Mount Surface Mount
Rise Time 12ns
Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 30V
Package / Case PowerPAK® SC-70-6
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Number of Pins 6
Vgs (Max) ±20V
Transistor Element Material SILICON
Fall Time (Typ) 10 ns
Operating Temperature -55°C~150°C TJ
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 12A
Packaging Tape & Reel (TR)
Threshold Voltage 1V
Published 2011
Series TrenchFET®
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 40A
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
See Relate Datesheet