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  • SIHW30N60E-GE3

SIHW30N60E-GE3

MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHW30N60E-GE3
  • Package: TO-3P-3 Full Pack
  • Datasheet: PDF
  • Stock: 251
  • Description: MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS (Kg)

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Shipping Cost

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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Turn On Delay Time 40 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 125m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 100V
Current - Continuous Drain (Id) @ 25°C 29A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 65ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 75 ns
Turn-Off Delay Time 95 ns
Continuous Drain Current (ID) 29A
Threshold Voltage 2V
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 4V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 65A
Avalanche Energy Rating (Eas) 690 mJ
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 19 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
See Relate Datesheet