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  • SIR432DP-T1-GE3

SIR432DP-T1-GE3

VISHAY SIR432DP-T1-GE3 MOSFET Transistor, N Channel, 28.4 A, 100 V, 0.0255 ohm, 10 V, 4 V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIR432DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 742
  • Description: VISHAY SIR432DP-T1-GE3 MOSFET Transistor, N Channel, 28.4 A, 100 V, 0.0255 ohm, 10 V, 4 V (Kg)

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Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-PDSO-C5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 5W Ta 54W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30.6m Ω @ 8.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1170pF @ 50V
Current - Continuous Drain (Id) @ 25°C 28.4A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 7.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 8.6A
Drain-source On Resistance-Max 0.0306Ohm
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 14.5 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet