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SIR662DP-T1-GE3

Trans MOSFET N-CH 60V 35.8A 8-Pin PowerPAK SO T/R


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIR662DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 570
  • Description: Trans MOSFET N-CH 60V 35.8A 8-Pin PowerPAK SO T/R (Kg)

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Details

Tags

Parameters
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 6.25W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Factory Lead Time 14 Weeks
Power Dissipation 6.25W
Mount Surface Mount
Case Connection DRAIN
Mounting Type Surface Mount
FET Type N-Channel
Package / Case PowerPAK® SO-8
Transistor Application SWITCHING
Number of Pins 8
Rds On (Max) @ Id, Vgs 2.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Weight 506.605978mg
Input Capacitance (Ciss) (Max) @ Vds 4365pF @ 30V
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25°C 60A Tc
Operating Temperature -55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
Packaging Tape & Reel (TR)
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Published 2011
Vgs (Max) ±20V
Series TrenchFET®
Continuous Drain Current (ID) 60A
Threshold Voltage 1V
Pbfree Code yes
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 60V
Part Status Active
Nominal Vgs 1 V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Radiation Hardening No
REACH SVHC Unknown
Number of Terminations 5
RoHS Status ROHS3 Compliant
Lead Free Lead Free
ECCN Code EAR99
Resistance 2.7mOhm
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
See Relate Datesheet