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SIR788DP-T1-GE3

MOSFET 30V 60A 48W 3.4mohm @ 10V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIR788DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 868
  • Description: MOSFET 30V 60A 48W 3.4mohm @ 10V (Kg)

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Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0034Ohm
Drain to Source Breakdown Voltage 30V
FET Feature Schottky Diode (Body)
Height 1.12mm
Length 6.25mm
Width 5.26mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series SkyFET®, TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
JESD-30 Code R-PDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5W Ta 48W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.4m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2873pF @ 15V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Rise Time 11ns
See Relate Datesheet