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SIR873DP-T1-GE3

TrenchFET Gen IV Power MOSFET P-Channel Single -150V VDS ±20V VGS -29A ID 8-Pin PowerPAK SOIC T/R


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIR873DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 365
  • Description: TrenchFET Gen IV Power MOSFET P-Channel Single -150V VDS ±20V VGS -29A ID 8-Pin PowerPAK SOIC T/R (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 1805pF @ 75V
Current - Continuous Drain (Id) @ 25°C 37A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) -9A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 37A
Drain-source On Resistance-Max 0.0475Ohm
Drain to Source Breakdown Voltage -150V
Pulsed Drain Current-Max (IDM) 50A
Avalanche Energy Rating (Eas) 80 mJ
Max Junction Temperature (Tj) 150°C
Factory Lead Time 14 Weeks
Height 1.12mm
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Surface Mount YES
RoHS Status ROHS3 Compliant
Transistor Element Material SILICON
Manufacturer Package Identifier S17-0173_SINGLE
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET® Gen IV
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 104W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 6.25W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 47.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
See Relate Datesheet