All Products

SQ2319ES-T1-GE3

MOSFET 40V 4.6A 3W P-Ch Automotive


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQ2319ES-T1-GE3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 501
  • Description: MOSFET 40V 4.6A 3W P-Ch Automotive (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Max Power Dissipation 3W
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SQ2319
Pin Count 3
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Turn On Delay Time 7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.6A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 40V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) -4.6A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Mount Surface Mount
Mounting Type Surface Mount
Drain-source On Resistance-Max 0.082Ohm
Package / Case TO-236-3, SC-59, SOT-23-3
Drain to Source Breakdown Voltage -40V
Number of Pins 3
Radiation Hardening No
Packaging Cut Tape (CT)
Published 2013
REACH SVHC Unknown
Series TrenchFET®
RoHS Status ROHS3 Compliant
Pbfree Code yes
Part Status Obsolete
Lead Free Lead Free
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
See Relate Datesheet