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  • SQ3419EEV-T1-GE3

SQ3419EEV-T1-GE3

MOSFET 40V 7.4A 5W P-Ch Automotive


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQ3419EEV-T1-GE3
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 910
  • Description: MOSFET 40V 7.4A 5W P-Ch Automotive (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 19.986414mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Digi-Reel®
Published 2013
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 78mOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5W
Turn On Delay Time 9 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 50m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1065pF @ 20V
Current - Continuous Drain (Id) @ 25°C 7.4A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 8ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 7.4A
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -40V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet