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SQD50P04-09L_GE3

MOSFET P-CH 40V 50A TO252


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQD50P04-09L_GE3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 167
  • Description: MOSFET P-CH 40V 50A TO252 (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 6675pF @ 20V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 61 ns
Continuous Drain Current (ID) 50A
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0094Ohm
DS Breakdown Voltage-Min 40V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 136W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 136W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 9.4m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
See Relate Datesheet