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SQJ411EP-T1_GE3

VISHAY - SQJ411EP-T1_GE3 - MOSFET, AUTO, P-CH, -12V, POWERPAK SO


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQJ411EP-T1_GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 180
  • Description: VISHAY - SQJ411EP-T1_GE3 - MOSFET, AUTO, P-CH, -12V, POWERPAK SO (Kg)

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IMPORTANT NOTICE

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Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code unknown
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 68W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 68W
Case Connection DRAIN
Turn On Delay Time 32 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 5.8m Ω @ 15A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9100pF @ 6V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Turn-Off Delay Time 198 ns
Continuous Drain Current (ID) -60A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 52A
Drain-source On Resistance-Max 0.0058Ohm
Drain to Source Breakdown Voltage -12V
Avalanche Energy Rating (Eas) 45 mJ
Max Junction Temperature (Tj) 175°C
Height 1.267mm
RoHS Status ROHS3 Compliant
See Relate Datesheet